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Supplementary document for Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer - 4983578.pdf

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journal contribution
posted on 15.01.2021, 05:22 by na zhang, Fujun Xu, Jing Lang, Liubing Wang, Jiaming Wang, Yuanhao Sun, Baiyin Liu, Nan Xie, Xuzhou Fang, Xuelin Yang
Hall data for a p-Al0.4Ga0.6N/Al0.67Ga0.33N superlattice layer. The hole concentration in this p-AlGaN superlattice layer is 3.7×1018 cm-3 at room temperature.