Supplementary document for Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer - 4983578.pdf

zhang, na; Xu, Fujun; Lang, Jing; Wang, Liubing; Wang, Jiaming; Sun, Yuanhao; Liu, Baiyin; Xie, Nan; Fang, Xuzhou; Yang, Xuelin

doi:10.6084/m9.figshare.13516523.v5

4983578.pdf (835.13 kB)

Supplementary document for Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer - 4983578.pdf

Version 5 2021-01-15, 05:22

Version 4 2021-01-15, 05:22

Version 3 2021-01-15, 05:21

Version 2 2021-01-13, 20:54

Version 1 2021-01-13, 20:54

journal contribution

posted on 2021-01-15, 05:22 authored by na zhang, Fujun Xu, Jing Lang, Liubing Wang, Jiaming Wang, Yuanhao Sun, Baiyin Liu, Nan Xie, Xuzhou Fang, Xuelin Yang

Hall data for a p-Al0.4Ga0.6N/Al0.67Ga0.33N superlattice layer. The hole concentration in this p-AlGaN superlattice layer is 3.7×1018 cm-3 at room temperature.