High-performance broadband position-sensitive detector based on lateral photovoltaic effect of PbSe heterostructure
Posted on 13.10.2021 - 16:22
PbSe has attracted considerable attention due to its promising applications in optoelectronics and energy harvesting. In this work, we explore the lateral photovoltaic effect (LPE) of PbSe films with a simple PbSe/Si heterostructure under nonuniform light illumination and zero-bias conditions. The LPE response is strongly dependent on the thickness of the PbSe film, but always shows a linear dependence on the laser spot position in an ultra-large working size of 5 mm and exhibits a wide photoresponse ranging from visible to near-infrared. The maximum position sensitivity can reach up to 190 mV/mm for the 15-nm-thick PbSe device at 1064 nm and nonlinearity is less than 4%, demonstrating its new potential application in novel position sensitive detectors (PSDs). Besides, the device also shows an ultrafast response speed, with the rise and fall time of ~40 μs and ~105 μs, respectively, and excellent reproducibility. These results bring great inspirations for developing high-performance broadband and self-powered PSDs based on the PbSe/Si heterostructure.
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Ma, Jikui; Chen, Mingjing; Qiao, Shuang; Fu, Guangsheng; Wang, Shufang (2021): High-performance broadband position-sensitive detector based on lateral photovoltaic effect of PbSe heterostructure. Optica Publishing Group. Collection. https://doi.org/10.6084/m9.figshare.c.5648743.v7
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