Strain-tuning of the emission axis of quantum emitters in an atomically thin semiconductor

Published on 2020-05-21T17:52:44Z (GMT) by
Strain engineering is a natural route to control the electronic and optical properties of two-dimensional materials. Recently, two-dimensional semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate - lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by ? 40° as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for integrated opto-electronics and nano-photonics platform.

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Chakraborty, Chitraleema; MUKHERJEE, ARUNABH; Moon, Hyowon; Konthasinghe, Kumarasiri; Qiu, Liangyu; Hou, Wenhui; et al. (2020): Strain-tuning of the emission axis of quantum emitters in an atomically thin semiconductor. The Optical Society. Collection. https://doi.org/10.6084/m9.figshare.c.4804533.v1