Strain-tuning of the emission axis of quantum emitters in an atomically thin semiconductor
Posted on 2020-05-21 - 17:52
Strain engineering is a natural route to control the electronic and optical properties
of two-dimensional materials. Recently, two-dimensional semiconductors have also been
demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique
valley properties inherited from the host semiconductor. Here, we study the continuous and
reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide
embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via
strain transfer from a lead magnesium niobate - lead titanate (PMN-PT) piezoelectric substrate.
Efficient modulation of the emission energy of several localized emitters up to 10 meV has been
demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find
that the emission axis rotates by ? 40° as the magnitude of the biaxial strain is varied on these
emitters. These results elevate the prospect of using all electrically controlled devices where the
property of the localized emitters in a 2D host can be engineered with elastic fields for integrated
opto-electronics and nano-photonics platform.
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Chakraborty, Chitraleema; MUKHERJEE, ARUNABH; Moon, Hyowon; Konthasinghe, Kumarasiri; Qiu, Liangyu; Hou, Wenhui; et al. (2020). Strain-tuning of the emission axis of quantum emitters in an atomically thin semiconductor. Optica Publishing Group. Collection. https://doi.org/10.6084/m9.figshare.c.4804533.v1
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AUTHORS (10)
CC
Chitraleema Chakraborty
AM
ARUNABH MUKHERJEE
HM
Hyowon Moon
KK
Kumarasiri Konthasinghe
LQ
Liangyu Qiu
WH
Wenhui Hou
TP
Tara Pena
CW
CARLA WATSON
SW
Stephen Wu
DE
Dirk Englund